日本四日市–(BUSINESS WIRE)–(美国商业资讯)–东芝公司(TOKYO:6502)今日宣布，东芝位于公司主要内存生产基地日本三重县四日市生产基地的最先进半导体制造新工厂——6号晶圆厂(Fab 6)和新研发中心——内存研发中心已正式开工建设。 6号晶圆厂将致力于生产东芝创新的3D闪存1——BiCS FLASH™。与5号晶圆厂(Fab 5)一样，建设工程将分两阶段进行，可根据市场趋势优化投资步伐。预计工程第一阶段将于2018年夏季竣工。东芝将密切监测市场，确定装机产能、生产目标和生产进度。 东芝还将建设一个内存研发中心，该内存研发中心毗邻新晶圆厂，预计将于2017年12月竣工。该中心将推进BiCS FLASH™和新内存的研发。 东芝决心迎合市场趋势，及时扩大BiCS FLASH™生产，提高公司内存业务竞争力，同时巩固公司在内存业务创新领域的领导地位。 * BiCS FLASH是东芝公司的商标1 一种在硅基板上堆叠闪存存储单元的结构。相比平面NAND闪存（存储单元位于基板上），其极大地提高了密度。 关于东芝东芝于1875年在东京成立，东芝公司是一家《财富》全球500强公司
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